| Article title |
Year |
A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor
AE Atamuratov, DR Rajapov, MM Khalilloev, K Sivasankaran, ... Silicon, 1-8, | 2025 |
Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization
M Balasubbareddy, K Sivasankaran, AE Atamuratov, MM Khalilloev Journal of Computational Electronics 24 (5), 144, | 2025 |
Self-Heating Effects in Nanoscale MOSFETs
A Yusupov, A Atamuratov, M Khalilloev IntechOpen, | 2025 |
Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet
A Atamuratov, I Karimov, M Foziljonov, A Abdikarimov, O Atamuratov, ... East European Journal of Physics, 357-364, | 2025 |
Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET
MM Khalilloev, BO Jabbarova, F Eshchanov, AE Atamuratov East European Journal of Physics, 253-356, | 2025 |
Investigation of the Behavior of Nickel Impurity Atoms in the Silicon Lattice Based on First Principles
BK Ismaylov, KA Ismailov, NF Zikrillaev, AE Atamuratov, SV Koveshnikov, ... East European Journal of Physics, 442-448, | 2025 |
Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET
AE Atamuratov, BO Jabbarova, MM Khalilloev, DR Rajapov, A Yusupov, ... Micro and Nanostructures 197, 208015, | 2025 |
Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET
A Atamuratov, B Jabbarova, M Khalilloev, A Yusupov, K Sivasankaran IEEE 25th International Conference of Young Professionals in Electron
, | 2024 |
Comparative study of the self-heating effect in the accumulation and inversion mode FinFETs
AE Atamuratov, BO Jabbarova, ES Xaitbayev, DR Rajapov, MM Khalilloev arXiv preprint arXiv:2402.10858, | 2024 |
OKSIDDA QAMRALGAN LOKAL ZARYADNING VERTIKAL IZOLYATSIYALANGAN ZATVORLI MAYDONIY TRANZISTOR ZATVOR-ISTOK (STOK) SIG IMIGA TASIRI.
I Karimov, M Foziljonov, A Abdikarimov, A Atamuratov È ÏÐÈÊËÀÄÍÛÅ ÏÐÎÁËÅÌÛ ÑÎÂÐÅÌÅÍÍÎÉ ÔÈÇÈÊÈ FUNDAMENTAL AND APPLIED PROBLEMS
, | 2023 |
Optimization of vertically stacked nanosheet FET immune to self-heating
M Balasubbareddy, K Sivasankaran, AE Atamuratov, MM Khalilloev Micro and Nanostructures 182, 207633, | 2023 |
The Effect of Height on the Efficiency of Vertical Silicon Tunnel Junction Solar Cell for High Solar Concentration
AE Atamuratov, BQ Jumaboyev, AE Abdikarimov, A Yusupov, ... 14th Spanish Conference on Electron Devices (CDE), 1-4, | 2023 |
Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs
AE Atamuratov, KS Saparov, A Yusupov, JC Chedjou Applied Sciences 13 (10), 6131, | 2023 |
Gate Oxide And Back Oxide Materials Combined Influence On Self-Heating And Dibl Effects In 2d Mos2 Based Mosfet
AEE Atamuratov, KS Saparov, AY Yusupov, JC Chedjou Preprints, | 2023 |
The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration
AE Atamuratov, BQ Jumaboyev, A Yusupov, AE Abdikarimov, AG Loureiro International Conference on Information Science and Communications
, | 2022 |
Self heating and DIBL effects in 2D MoS2 based MOSFET with different gate oxide and back oxide materials
AE Atamuratov, XS Saparov, JC Chedjou, A Yusupov, K Kyamakya International Conference on Information Science and Communications
, | 2022 |
Memristors: types, characteristics and prospects of use as the main element of the future artificial intelligence
A Yusupov, AE Atamuratov, AE Abdikarimov, TA Atamuratov, KA Sattarov, ... International Conference on Information Science and Communications
, | 2022 |
Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET
AE Atamuratov, BO Jabbarova, MM Khalilloev, A Yusupov, ... Íàíîñèñòåìû: ôèçèêà, õèìèÿ, ìàòåìàòèêà 13 (2), 148-155, | 2022 |
The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS2 based MOSFET
AE Atamuratov, XS Saparov, TA Atamuratov, A Yusupov, F Schwierz International Conference on Information Science and Communications
, | 2021 |
The self-heating effect in junctionless fin field-effect transistors based on silicon-on-insulator structures with different channel shapes
AE Atamuratov, BO Jabbarova, MM Khalilloev, A Yusupov Technical Physics Letters 47 (7), 542-545, | 2021 |
Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries
AE Atamuratov, BO Jabbarova, MM Khalilloev, A Yusupov, AG Loureriro 13th Spanish Conference on Electron Devices (CDE), 62-65, | 2021 |
Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape
AE Atamuratov, MM Khalilloev, A Yusupov, JC Chedjou, K Kyamakya e-Journal of Surface Science and Nanotechnology 19, 9-12, | 2021 |
Simulation of self-heating effect in MOSFET based on 2D MoS2
AE Atamuratov, XSH Saparov, A Yusupov, F Schwierz Scientific Bulletin. Physical and Mathematical Research 3 (1), 29-34, | 2021 |
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
AE Atamuratov, MM Khalilloev, A Yusupov, AJ García-Loureiro, ... Applied Sciences 10 (15), 5327, | 2020 |
The amplitude of RTN in nanometer SOI FinFET with different channel shape.
A Yusupov, AE Atamuratov, AE Abdikarimov, JC Chedjou, K Kyamakya World Scientific Proceedings Series on Computer Engineering and Information
, | 2020 |
Lateral CapacitanceVoltage Method of NanoMOSFET for Detecting the Hot Carrier Injection
JCCKK Atabek E. Atamuratov, Ahmed Yusupov, Zukhra A. Atamuratova Applied Sciences 10 (21), 7935-7944, | 2020 |
Anomalous Behavior of Lateral CV Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer
ZA Atamuratova, A Yusupov, BO Khalikberdiev, AE Atamuratov Technical Physics 64 (7), 1006-1009, | 2019 |
Influence of a lateral gate extension on short-channel effects in nanometer SOI FinFET transistor
AE Abdikarimov, AE Atamuratov, A Yusupov | 2019 |
Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer
AE Atamuratov, ZA Atamuratova, A Yusupov, A Ghani Results in Physics 11, 656-658, | 2018 |
New fast method for reading charge bit stored in MNOSFET
AE Atamuratov, ZA Atamuratova, A Yusupov | 2018 |
The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET
AE Abdikarimov, A Yusupov, AE Atamuratov Technical Physics Letters 44 (11), 962-964, | 2018 |
INTERCAPACITANCE BETWEEN TWO CHARGES LOCATED IN THE DIFFERENT ENVIRONMENTS
AE Abdikarimov, A Yusupov, AE Atamuratov Central Asian Problems of Modern Science and Education 3 (4), 33-37, | 2018 |
Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate
AE Atamuratov, M Khalilloev, A Abdikarimov, ZA Atamuratova, M Kittler, ... Íàíîñèñòåìû: ôèçèêà, õèìèÿ, ìàòåìàòèêà 8 (1), 75-78, | 2017 |
Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes
AE Atamuratov, A Abdikarimov, M Khalilloev, ZA Atamuratova, ... Íàíîñèñòåìû: ôèçèêà, õèìèÿ, ìàòåìàòèêà 8 (1), 71-74, | 2017 |
The lateral capacitance of nanometer mnosfet with a single charge trapped in oxide layeror at SiO2-Si3N4 interfaceat
E Atamuratov, UA Aminov, ZA Atamuratova, M Halillaev, A Abdikarimov, ... Íàíîñèñòåìû: ôèçèêà, õèìèÿ, ìàòåìàòèêà 6 (6), 837-842, | 2015 |
Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET
A Abdikarimov, G Indalecio, E Comesana, AJ Garcia-Loureiro, N Seoane, ... International Workshop on Computational Electronics (IWCE), 1-4, | 2014 |
Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge
AE Atamuratov, R Granzner, M Kittler, Z Atamuratova, M Halillaev, ... Low-Dimensional Functional Materials, 243-249, | 2013 |
Simulation of carrier distribution in nanometer nMOSFET with single charge trapped in oxide and at Si-SiO2-interface
AE Atamuratov, Z Atamuratova, M Halillaev, G Ghione Program and Abstracts of the Advanced Research Workshop on Low-Dimensional
, | 2012 |
Prospects for biomass as a of renewable energy source in rural areas in Uzbekistan
AE Atamuratov, S Ismailov, D Saidov, U Aminov | 2012 |
Simulation of the built-in oxide charge influence on the carrier concentration distribution in the substrate of MOSFET structures
AE Atamuratov, H Abdikarimov, E Comesana, R Valin, A Garcia-Loureiro | 2010 |
Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity
JD Wei, SF Li, A Atamuratov, HH Wehmann, A Waag Applied Physics Letters 97 (17), | 2010 |
Influence of the Field of the Built_in Oxide Charge on the Lateral CV Dependence of the MOSFET
AE Atamuratov, DY Matrasulov, PK Khabibullaev Doklady Physics 55 (2), 52-54, | 2010 |
Simulation of influence of the charge embedded in the oxide layer on the lateral CV characteristic of coaxial MOSFET; Modelirovanie vliyaniya zaryada, vstroennogo v oksidnyj
AE Atamuratov, DU Matrasulov Uzbekiston Fizika Zhurnali 11, | 2009 |
Tunable SiO2/Si-based nanostructures
AN Georgobiani, AE Atamuratov, UA Aminov, TA Atamuratov Inorganic Materials 45 (8), 900-904, | 2009 |
Modelling of Quantum Wires in the Interface Layer of the Semiconductor-Oxide Structures with Charge Built in Oxide
AE Atamuratov Complex Phenomena in Nanoscale Systems, 229-236, | 2009 |
Simulation of influence of the charge embedded in the oxide layer on the lateral CV characteristic of coaxial MOSFET
AE Atamuratov, DU Matrasulov | 2009 |
Modeling of lateral CV dependence of coaxial MOSFET with built-in charge in oxide layer
AE Atamuratov | 2007 |
Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement.
AÉ Atamuratov, DU Matrasulov, PK Khabibullaev Doklady Physics 52 (6), | 2007 |
Determination of the longitudinal charge distribution at the Si-SiO2 interface of MOSFET by CV measurements
AE Atamuratov, HH Wehmann Proceedings of international conference dedicated to the ninetieth
, | 2004 |
The method of charge image reading on the surface of semiconductor by lateral capacitive measurement; Metod chteniya zaryadovykh izobrazhenij na poverkhnosti poluprovodnika
AE Atamuratov | 2004 |
The method of charge image reading on the surface of semiconductor by lateral capacitive measurement
AE Atamuratov Proceedings of the International conference'Photoelectrical phenomena in
, | 2004 |
'Scanning'of nonuniform charge distribution on Si-SiO2 interface of the MOS-transistor by capacitance measurements
AE Atamuratov Proceedings of the International conference'Photoelectrical phenomena in
, | 2004 |
Influence of the high-energy Bremsstrahlung on field transistor threshold voltage
A Atamuratov Uzbekiston Fizika Zhurnali 5, | 2004 |
Radiation induced localization of a charge in limited space of oxide layer in MOS transistor
AE Atamuratov, A Yusupov, A Kashetov, D Saidov, K Rusimov Abstracts of the fifth international conference on modern problems of
, | 2003 |
The technique for estimation of linear dimensions of the zone of inhomogeneous distribution of charge in boundary Si-SiO {sub 2} of MOS transistor; Sposob otsenki linejnogo
AE Atamuratov, A Yusupov, K Babajanov | 2003 |
Peculiarities of the effect of inhomogeneous distribution of charge of sublock oxide on the capacity characteristics of silicon MOS-transistor; Osobennosti vliyaniya
AE Atamuratov, A Yusupov, K Bobojonov, D Saidov, K Ruzimov | 2002 |
Experimental assessment of the nonuniform radiation-induced space-charge distribution in the surface region of silicon; Ehksperimental'noe modelirovanie neodnorodnogo
AE Atamuratov, AY Yusupov, KA Adinaev Neorganicheskie Materialy 37, | 2001 |
Experimental assessment of the nonuniform radiation-induced space-charge distribution in the surface region of silicon
AE Atamuratov, A Yusupov, K Adinaev Inorganic materials 37 (8), 767-768, | 2001 |
Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor
AÉ Atamuratov, SZ Zainabidinov, A Yusupov, KS Daliev, KM Adinaev Technical Physics 42 (9), 1106-1107, | 1997 |
Effect of thermo-field treatment and ionizing radiation on energy spectrum of surface states on the interface of Si-SiO {sub 2} MOS transistor; Vliyanie termopolevoj obrabotki
AE Atamuratov, SZ Zajnabidinov, A Yusupov, KS Daliev, KM Adinaev Zhurnal Tekhnicheskoj Fiziki 67, | 1997 |
The influence of Co {sup 60} quanta on current characteristics of rectifier columns on the base of silicon; Vliyaniya kvantov Co {sup 60} na tokovye kharakteristiki
G Aripov, AE Atamuratov, U Asatova, D Kurbanov, K Gummieva | 1995 |
The peculiarities of the change of the spectrum of surface states on the inter-phase boundary Si-SiO {sub 2} of MOS-transistor after ionizing irradiation and thermal treatment
SZ Zajnabidinov, KS Daliev, AE Atamuratov, K Adinaev | 1995 |
The influence of Co60 quanta on current characteristics of rectifier columns on the base of silicon
G Aripov, AE Atamuratov, U Asatova, D Kurbanov, K Gummieva | 1995 |
Effect of the generation of surface states of Si-SiO2 interface boundary on the current of MOS-transistor dispersion
AE Atamuratov, KS Daliev, SZ Zainabidinov, AY Yusupov, KM Adinaev PISMA V ZHURNAL TEKHNICHESKOI FIZIKI 21 (21), 79-83, | 1995 |
Influence of surface states generated at the Si-SiO2 interphase boundary on the leakage current of a MOS transistor
AE Atamuratov, KS Daliev, SZ Zainabidinov, AY Yusupov, KM Adinaev Technical Physics Letters 21 (11), 897-898, | 1995 |
MOS transistor leak current and the status of Si-SiO2 interphase boundary
AE Atamuratov, AE Daliev, SZ Zainabidinov, AY Yusupov PISMA V ZHURNAL TEKHNICHESKOI FIZIKI 21 (4), 75-78, | 1995 |
Leakage current of an MOS transistor and the state of the Si-SiO2 interface
AÉ Atamuratov, AÉ Daliev, SZ Zainabidinov, AY Yusupov Technical Physics Letters 21 (2), 163-164, | 1995 |
Leakage current of an MOS transistor and the state of the Si-SiO (sub 2) interface
AE Atamuratov, AE Daliev, SZ Zainabidinov, A Yu Yusupov Technical Physics Letters 21 (2), 75-80, | 1995 |
Influence of the Bremsstrahlung on the radiative induction of charge and interface states in MOS transistors; O roli tormoznogo izlucheniya v protsessakh radiatsionnogo
AE Atamuratov, KS Daliev, SZ Zajnabidinov Uzbekiston Fizika Zhurnali 3, | 1992 |
Influence of the Bremsstrahlung on the radiative induction of charge and interface states in MOS transistors
AE Atamuratov, KS Daliev, SZ Zajnabidinov | 1992 |
CHEMISTRY AND MATERIAL SCIENCE
AE Atamuratov, M Khalilloev, A Abdikarimov, ZA Atamuratova, M Kittler, ... | |
